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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6077 2N6078 2N6079 DESCRIPTION With TO-66 package Low collector saturation voltage High breakdown voltage APPLICATIONS For horizontal deflection output stages of TV's and CRT's PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL PARAMETER 2N6077 VCBO Collector-base voltage VCEO Collector-emitter voltage INC NG S HA 2N6078 2N6079 2N6077 2N6078 2N6079 Open emitter CON EMI CONDITIONS TOR DUC VALUE 300 275 375 275 250 350 UNIT V Open base V VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total Power Dissipation Junction temperature Storage temperature Open collector 6 7 V A W ae ae TC=25ae 45 150 -65~200 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 4.28 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2N6077 2N6078 2N6079 SYMBOL CONDITIONS MIN TYP. MAX UNIT 2N6077 Collector-emitter sustaining voltage 275 VCEO(SUS) 2N6078 IC=0.1A ;IB=0 250 V 2N6079 350 VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A 1.0 V VBEsat Base-emitter saturation voltage IC=5A; IB=0.5A 1.2 V ICEO Collector cut-off current VCE= Rated VCEO; IB=0 VCE=Rated VCEO; VBE(off)=1.5V TC=125ae VCB=Rated VCBO; IE=0 2.0 0.1 1.0 mA ICEX Collector cut-off current ICBO Collector cut-off current mA IEBO Emitter cut-off current hFE DC current gain fT Transition frequency INC NG S HA VEB=6V; IC=0 IC=1.2A ; VCE=1V CON EMI TOR DUC 0.1 1.0 12 70 7 mA mA IC=0.5A;VCE=10V;f=1MHz MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6077 2N6078 2N6079 NG S HA INC CON EMI TOR DUC Fig.2 outline dimensions 3 |
Price & Availability of 2N6079
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